发明申请
US20080124930A1 METHODS OF RECYCLING A SUBSTRATE INCLUDING USING A CHEMICAL MECHANICAL POLISHING PROCESS
审中-公开
回收包括使用化学机械抛光工艺的基板的方法
- 专利标题： METHODS OF RECYCLING A SUBSTRATE INCLUDING USING A CHEMICAL MECHANICAL POLISHING PROCESS
- 专利标题（中）： 回收包括使用化学机械抛光工艺的基板的方法
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申请号： US11945359申请日： 2007-11-27
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公开(公告)号： US20080124930A1公开(公告)日： 2008-05-29
- 发明人: Jong Heun Lim , Chang-Ki Hong , Bo-Un Yoon , Dae-Lok Bae , Seong-Kyu Yun , Suk-Hun Choi
- 申请人： Jong Heun Lim , Chang-Ki Hong , Bo-Un Yoon , Dae-Lok Bae , Seong-Kyu Yun , Suk-Hun Choi
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 优先权： KR10-2006-0117987 20061128
- 主分类号： H01L21/302
- IPC分类号： H01L21/302
摘要：
In a method of recycling a substrate having an edge portion on which a stepped portion is formed, the substrate is chemically mechanically polished using a first slurry composition including fumed silica to remove the stepped portion. The substrate is then chemically mechanically polished using a second slurry composition including colloidal silica to improve the surface roughness of the substrate. The substrate having the edge region on which the stepped portion is formed may include a donor substrate used for manufacturing a silicon-on-insulator (SOI) substrate.