Invention Application
- Patent Title: ANALYSIS TECHNIQUES TO REDUCE SIMULATIONS TO CHARACTERIZE THE EFFECT OF VARIATIONS IN TRANSISTOR CIRCUITS
- Patent Title (中): 分析技术减少模拟以表征变化对晶体管电路的影响
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Application No.: US11464014Application Date: 2006-08-11
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Publication No.: US20080126061A1Publication Date: 2008-05-29
- Inventor: Jerry D. Hayes , Sambasivan Narayan , Jeffery H. Oppold , James E. Sundquist
- Applicant: Jerry D. Hayes , Sambasivan Narayan , Jeffery H. Oppold , James E. Sundquist
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
Embodiments of the invention provide a method, computer program product, etc. for analysis techniques to reduce simulations to characterize the effect of variations in transistor circuits. A method of simulating transistors in an integrated circuit begins by reducing a group of parallel transistors to a single equivalent transistor. The equivalent transistor is subsequently simulated, wherein only a portion of the parallel transistors are simulated. Next, the integrated circuit is divided into channel-connected components and simulated for the channel-connected components. A table is created for each type of channel-connected component; and parameterized across chip variation equations are calculated from results of the integrated circuit simulation. Moreover, table entries are created, which include a number of transistor types, a number of unique transistor primitive patterns, and/or a number of paths through each of the transistor primitive patterns.
Information query