A plasma processing apparatus includes a process chamber having a wafer mounted therein such that a plasma process is performed on the wafer, and an X-axis scanning injector mounted in the process chamber such that the X-axis scanning injector supplies a first local plasma of a reaction gas to a local region on the wafer. The X-axis scanning injector is movable in the X-axis direction to scan the first local plasma over the entire area of the wafer. A Y-axis scanning injector is mounted in the process chamber such that the Y-axis scanning injector supplies a second local plasma of a reaction gas to a local region on the wafer. The Y-axis scanning injector is movable in the Y-axis direction to scan the second local plasma over the entire area of the wafer. The deposition accomplished by the local plasmas over the entire area of the wafer by the X-axis and Y-axis scanning operations.