An electrostatic discharge-protected MOS structure is disclosed. An electrostatic discharge-protected MOS structure includes a semiconductor substrate of a first type, a first well of the first type formed in the semiconductor substrate, and a second well of a second type disposed adjacent to the first well. The MOS structure further includes a source region, a drain region, and an oxide layer and a polysilicon layer for forming a gate electrode of the MOS structure. In addition, the MOS structure includes a parasitic SCR comprising at least a parasitic NPN bipolar transistor and a buried layer of the second type interposed between the second well and the semiconductor substrate. The buried layer functions to lower a resistance of the semiconductor substrate during an ESD event so that ESD currents generated by the parasitic SCR are dissipated through the buried layer and the semiconductor substrate, thereby protecting the MOS structure.