发明申请
- 专利标题: NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
- 专利标题(中): 氮化物半导体发光器件及其制造方法
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申请号: US12016020申请日: 2008-01-17
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公开(公告)号: US20080131988A1公开(公告)日: 2008-06-05
- 发明人: Jae Hoon Lee , Jeong Tak Oh , Jin Sub Park
- 申请人: Jae Hoon Lee , Jeong Tak Oh , Jin Sub Park
- 申请人地址: KR Kyungki-do
- 专利权人: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- 当前专利权人地址: KR Kyungki-do
- 优先权: KR2004-73558 20040914
- 主分类号: H01L21/329
- IPC分类号: H01L21/329
摘要:
A nitride semiconductor light emitting device and a method of manufacturing the same are disclosed. The nitride semiconductor light emitting device comprises an n-type nitride semiconductor layer formed on a substrate, an active layer formed on the n-type nitride semiconductor layer, a p-type nitride semiconductor layer formed on the active layer, an undoped GaN layer formed on the p-type nitride semiconductor layer, an AlGaN layer formed on the undoped GaN layer to form a two-dimensional electron gas (2DEG) layer at a bonding interface between the AlGaN layer and the undoped GaN layer, and an n-side electrode and a p-side electrode respectively formed on the n-type nitride semiconductor layer and the AlGaN layer to be connected to each other. As a hetero-junction structure of GaN/AlGaN is formed on the p-type nitride semiconductor layer, contact resistance between the p-type nitride semiconductor layer and the p-side electrode is enhanced by virtue of tunneling effect through the 2DEG layer.