发明申请
- 专利标题: Method of processing wafer
- 专利标题(中): 晶圆处理方法
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申请号: US11998045申请日: 2007-11-28
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公开(公告)号: US20080132035A1公开(公告)日: 2008-06-05
- 发明人: Koichi Kondo
- 申请人: Koichi Kondo
- 申请人地址: JP Tokyo
- 专利权人: Disco Corporation
- 当前专利权人: Disco Corporation
- 当前专利权人地址: JP Tokyo
- 优先权: JP2006-324921 20061130
- 主分类号: H01L21/304
- IPC分类号: H01L21/304
摘要:
An undefill material is provided on the surface of a wafer in such a manner as to cover bumps, then the wafer is irradiated with a laser beam from the surface thereof and along planned cutting lines so as to remove an insulation layer and the underfill material present over the planned cutting lines, and the debris generated in this instance are deposited on the underfill material and are thereby prevented from being deposited on the wafer surface and/or on the bumps. Subsequently, a surface layer of the underfill material is cut so as to make the bumps flush in height and to expose the tips of the bumps.
公开/授权文献
- US07662666B2 Method of processing wafer 公开/授权日:2010-02-16
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