A plasma processing apparatus includes: a chamber; an insulating member disposed in an upper portion of the chamber; a ground electrode formed at a side wall of the chamber, a ground potential being applied to the ground electrode; and a lower electrode disposed in a lower portion of the chamber, a substrate being placed on the lower electrode, wherein the lower electrode is divided into a plurality of electrodes.According to an aspect of the present invention, particles accumulated in the central portion on a lower surface, an edge area of an upper surface, a side, and an edge area of the lower surface of the substrate can be effectively removed.