发明申请
- 专利标题： FinFET and method of manufacturing the same
- 专利标题（中）： FinFET及其制造方法
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申请号： US12000071申请日： 2007-12-07
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公开(公告)号： US20080135888A1公开(公告)日： 2008-06-12
- 发明人: Deok-Hyung Lee , Sun-Ghil Lee , Jong-Ryeol Yoo , Si-Young Choi
- 申请人： Deok-Hyung Lee , Sun-Ghil Lee , Jong-Ryeol Yoo , Si-Young Choi
- 优先权： KR2006-124950 20061208
- 主分类号： H01L29/04
- IPC分类号： H01L29/04 ; H01L21/336
摘要：
A FinFET may include a semiconductor fin having a top surface and a sidewall having different crystal planes. A gate dielectric layer on the top surface and on the sidewall has different thicknesses. A gate electrode is formed on the gate dielectric layer across the top surface and sidewall of the semiconductor fin.
公开/授权文献
- US07842566B2 FinFET and method of manufacturing the same 公开/授权日：2010-11-30
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