发明申请
US20080142817A1 CHIP-SCALE METHODS FOR PACKAGING LIGHT EMITTING DEVICES AND CHIP-SCALE PACKAGED LIGHT EMITTING DEVICES
有权
用于包装发光装置和芯片尺寸的包装光发射装置的芯片尺寸方法
- 专利标题: CHIP-SCALE METHODS FOR PACKAGING LIGHT EMITTING DEVICES AND CHIP-SCALE PACKAGED LIGHT EMITTING DEVICES
- 专利标题(中): 用于包装发光装置和芯片尺寸的包装光发射装置的芯片尺寸方法
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申请号: US12027313申请日: 2008-02-07
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公开(公告)号: US20080142817A1公开(公告)日: 2008-06-19
- 发明人: James Ibbetson , Bernd Keller , Primit Parikh
- 申请人: James Ibbetson , Bernd Keller , Primit Parikh
- 专利权人: Cree, Inc.
- 当前专利权人: Cree, Inc.
- 主分类号: H01L33/00
- IPC分类号: H01L33/00 ; H01L21/02
摘要:
A packaged light emitting device includes a carrier substrate having a top surface and a bottom surface, first and second conductive vias extending from the top surface of the substrate to the bottom surface of the substrate, and a bond pad on the top surface of the substrate in electrical contact with the first conductive via. A diode having first and second electrodes is mounted on the bond pad with the first electrode is in electrical contact with the bond pad. A passivation layer is formed on the diode, exposing the second electrode of the diode. A conductive trace is formed on the top surface of the carrier substrate in electrical contact with the second conductive via and the second electrode. The conductive trace is on and extends across the passivation layer to contact the second electrode.Methods of packaging light emitting devices include providing an epiwafer including a growth substrate and an epitaxial structure on the growth substrate, bonding a carrier substrate to the epitaxial structure of the epiwafer, forming a plurality of conductive vias through the carrier substrate, defining a plurality of isolated diodes in the epitaxial structure, and electrically connecting at least one conductive via to respective ones of the plurality of isolated diodes.
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