发明申请
- 专利标题: HIGH-SPEED PROGRAMMING OF MEMORY DEVICES
- 专利标题(中): 高速编程存储器件
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申请号: US11957970申请日: 2007-12-17
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公开(公告)号: US20080148115A1公开(公告)日: 2008-06-19
- 发明人: Dotan Sokolov , Ofir Shalvi
- 申请人: Dotan Sokolov , Ofir Shalvi
- 申请人地址: IL Herzlia
- 专利权人: ANOBIT TECHNOLOGIES LTD.
- 当前专利权人: ANOBIT TECHNOLOGIES LTD.
- 当前专利权人地址: IL Herzlia
- 主分类号: G06F11/30
- IPC分类号: G06F11/30
摘要:
A method for operating a memory that includes a plurality of analog memory cells includes storing data in a first group of the memory cells by writing respective first cell values to the memory cells in the first group. After storing the data, respective second cell values are read from the memory cells in the first group, and differences are found between the respective first and second cell values for each of one or more of the memory cells in the first group. The differences are processed to produce error information, and the error information is stored in a second group of the memory cells.
公开/授权文献
- US07900102B2 High-speed programming of memory devices 公开/授权日:2011-03-01
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