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发明申请
US20080150082A1 POWER TRANSISTOR FEATURING A DOUBLE-SIDED FEED DESIGN AND METHOD OF MAKING THE SAME 有权
功率晶体管具有双面进料设计及其制造方法

POWER TRANSISTOR FEATURING A DOUBLE-SIDED FEED DESIGN AND METHOD OF MAKING THE SAME
摘要：
A power transistor (210) comprises a plurality of unit cell devices (212), a base contact configuration, an emitter contact configuration, and a collector contact configuration. The plurality of unit cell devices is arranged along an axis (194), each unit cell device including base (80), emitter (82), and collector (84) portions. The base contact configuration includes (i) a first base feed (150) coupled to the base portion of each unit cell device via a first end of at least one base finger (154) associated with a corresponding unit cell device and (ii) a second base feed (152) coupled to the base portion of each unit cell device via an opposite end of the at least one base finger associated with the corresponding unit cell device. The emitter contact configuration includes (i) a first emitter feed (172) coupled to the emitter portion of each unit cell device via a first end of an emitter metallization (176) associated with a corresponding unit cell device and (ii) a second emitter feed (174) coupled to the emitter portion of each unit cell device via an opposite end of the emitter metallization associated with the corresponding unit cell device. The collector contact configuration includes a collector feed (188) coupled to the collector portion of each unit cell device.
摘要（中）：

功率晶体管（210）包括多个单位电池器件（212），基极触点配置，发射极触点配置和集电极触点配置。 多个单电池器件沿轴线（194）布置，每个单元电池器件包括基极（80），发射极（82）和集电极（84）部分。 基本接触配置包括：（i）经由与相应的单位电池器件相关联的至少一个基本手指（154）的第一端耦合到每个单元电池器件的基座部分的第一基本馈电（150）和（ii） 第二基本馈送（152），其经由与所述对应的单元设备相关联的所述至少一个基本指的相对端耦合到每个单元单元设备的基本部分。 发射极接触配置包括：（i）经由与相应的单位电池器件相关联的发射极金属化（176）的第一端耦合到每个单位电池器件的发射极部分的第一发射极馈电（172）和（ii）第二发射极 馈电（174）经由与相应的单位电池器件相关联的发射极金属化的相对端耦合到每个单位电池器件的发射极部分。 集电极接触配置包括耦合到每个单位电池器件的集电极部分的集电极馈送（188）。

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