Disclosed is a storage element having a storage layer retaining information based on a magnetization state of a magnetic material; a fixed-magnetization layer having a ferromagnetic layer; and an intermediate layer interposed between the storage layer and the fixed-magnetization layer. In the storage element, spin-polarized electrons are injected in a stacking direction to change a magnetization direction of the storage layer so that information is recorded in the storage layer, and resistivity of the ferromagnetic layer forming the storage layer is 8×10−7 Ωm or more.