发明申请
- 专利标题： Spin transfer MRAM device with magnetic biasing
- 专利标题（中）： 具有磁偏置的自旋转移MRAM器件
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申请号： US11644132申请日： 2006-12-22
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公开(公告)号： US20080151614A1公开(公告)日： 2008-06-26
- 发明人: Yimin Guo
- 申请人： Yimin Guo
- 专利权人： MagIC Technologies, Inc.
- 当前专利权人： MagIC Technologies, Inc.
- 主分类号： G11C11/00
- IPC分类号： G11C11/00 ; H01L29/82 ; H01L21/00
摘要：
The addition of segmented write word lines to a spin-transfer MRAM structure serves to magnetically bias the free layer so that the precessional motion of the magnetization vector that is set in play by the flow of spin polarized electrons into the free layer allows said magnetic vector to be switched rather than to oscillate between two easy axis directions.
公开/授权文献
- US07508042B2 Spin transfer MRAM device with magnetic biasing 公开/授权日：2009-03-24
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