- 专利标题: Frequency-doubled edge-emitting semiconductor lasers
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申请号: US11643114申请日: 2006-12-21
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公开(公告)号: US20080151948A1公开(公告)日: 2008-06-26
- 发明人: Sergei V. Govorkov , R. Russel Austin
- 申请人: Sergei V. Govorkov , R. Russel Austin
- 主分类号: H01S3/10
- IPC分类号: H01S3/10
摘要:
A frequency-doubled, edge-emitting semiconductor laser includes a separate confinement heterostructure surmounted by a waveguide including a converting layer of a periodically poled, optically nonlinear material. Fundamental radiation generated in the heterostructure is directionally coupled from the heterostructure into the waveguide, is converted to second-harmonic radiation in the converting layer and is delivered from the waveguide as output radiation. In one example, a distributed Bragg grating is included at an interface between the heterostructure and the waveguide for facilitating coupling of fundamental radiation from the heterostructure into the waveguide.
公开/授权文献
- US07433374B2 Frequency-doubled edge-emitting semiconductor lasers 公开/授权日:2008-10-07
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