A memory module for improving impact resistance mainly comprises a multi-layer PWB (Printed Wiring Board) and a plurality of memory packages. The multi-layer PWB is rectangular and has two longer sides and two shorter sides, wherein a plurality of gold fingers are disposed along one of the longer sides, at least an arc notch and a plurality of first stress-absorbing slots are formed at the two shorter sides respectively. Preferably, plural second stress-absorbing slots are formed at another longer side far away from the gold fingers. The impact stress due to accidental drop may be absorbed by the first stress-absorbing slots or/and the second stress-absorbing slots to prevent the product from damaging.