发明申请
US20080157365A1 Transistor having an etch stop layer including a metal compound that is selectively formed over a metal gate, and method therefor
有权
具有包括选择性地形成在金属栅极上的金属化合物的蚀刻停止层的晶体管及其方法
- 专利标题： Transistor having an etch stop layer including a metal compound that is selectively formed over a metal gate, and method therefor
- 专利标题（中）： 具有包括选择性地形成在金属栅极上的金属化合物的蚀刻停止层的晶体管及其方法
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申请号： US11646764申请日： 2006-12-27
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公开(公告)号： US20080157365A1公开(公告)日： 2008-07-03
- 发明人: Andrew Ott , Sean King , Ajay Sharma
- 申请人： Andrew Ott , Sean King , Ajay Sharma
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L21/441
摘要：
In one aspect, an apparatus may include a metal gate of a transistor. An etch stop layer may be selectively formed over the metal gate. The etch stop layer may include a metal compound. An insulating layer may be over the etch stop layer. A conductive structure may be included through the insulating layer to the metal gate. Methods of making such transistors are also disclosed.
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