发明申请
- 专利标题： Non-volatile multilevel memory cell programming
- 专利标题（中）： 非易失性多层存储器单元编程
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申请号： US11646658申请日： 2006-12-28
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公开(公告)号： US20080158951A1公开(公告)日： 2008-07-03
- 发明人: Seiichi Aritome
- 申请人： Seiichi Aritome
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 主分类号： G11C16/06
- IPC分类号： G11C16/06
摘要：
The present disclosure includes methods, devices, modules, and systems for programming multilevel non-volatile memory cells, each cell having a number of lower pages and an upper page. One method includes programming a first lower page, programming a second lower page, programming a third lower page, programming an upper page, and reprogramming the upper page of a cell.
公开/授权文献
- US07701765B2 Non-volatile multilevel memory cell programming 公开/授权日：2010-04-20
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