发明申请
US20080160732A1 Method for the Production of a Buried Stop Zone in a Semiconductor Component and Semiconductor Component Comprising a Buried Stop Zone
有权
用于制造半导体部件中的埋置停止区域的方法和包括埋设停止区域的半导体部件
- 专利标题： Method for the Production of a Buried Stop Zone in a Semiconductor Component and Semiconductor Component Comprising a Buried Stop Zone
- 专利标题（中）： 用于制造半导体部件中的埋置停止区域的方法和包括埋设停止区域的半导体部件
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申请号： US12039173申请日： 2008-02-28
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公开(公告)号： US20080160732A1公开(公告)日： 2008-07-03
- 发明人: Reiner Barthelmess , Anton Mauder , Franz-Josef Niedernostheide , Hans-Joachim Schulze
- 申请人： Reiner Barthelmess , Anton Mauder , Franz-Josef Niedernostheide , Hans-Joachim Schulze
- 申请人地址： DE Munich
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Munich
- 优先权： DE10243758.0 20020920
- 主分类号： H01L21/266
- IPC分类号： H01L21/266
摘要：
According to one embodiment, a method for the production of a stop zone in a doped zone of a semiconductor body comprises irradiating the semiconductor body with particle radiation in order to produce defects in a crystal lattice of the semiconductor body. The semiconductor body is exposed to an environment containing dopant atoms, during which dopant atoms are indiffused into the semiconductor body at an elevated temperature.
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