发明申请
- 专利标题： STORAGE ELEMENT AND MEMORY
- 专利标题（中）： 存储元素和存储器
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申请号： US11564595申请日： 2006-11-29
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公开(公告)号： US20080164547A1公开(公告)日： 2008-07-10
- 发明人: Yutaka Higo , Masanori Hosomi , Kazuhiro Bessho , Tetsuya Yamamoto , Hiroyuki Ohmori , Kazutaka Yamane , Yuki Oishi , Hiroshi Kano
- 申请人： Yutaka Higo , Masanori Hosomi , Kazuhiro Bessho , Tetsuya Yamamoto , Hiroyuki Ohmori , Kazutaka Yamane , Yuki Oishi , Hiroshi Kano
- 优先权： JPP2005-348112 20051201
- 主分类号： H01L29/82
- IPC分类号： H01L29/82
摘要：
A storage element includes a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.
公开/授权文献
- US08575711B2 Storage element and memory 公开/授权日：2013-11-05
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