The present invention relates to a vertical-alignment type porous silicon including a first pore 11 which is formed in an upper side of the silicon, a second pore 12 which is formed in a lower side of the first pore 11 and has a diameter that is larger or smaller than a diameter of the first pore 11, a third pore 13 which is formed in a lower side of the second pore 12 and has a diameter that is identical or similar to the diameter of the first pore 11, and one or more pore parts 11, 12, and 13 which includes the first pore 11, the second pore 12, and the third pore 13. A pore part having a double structure is formed in a silicon. Thus, the silicon having an improved surface area can be obtained as compared to a known porous silicon, and since different electronic materials can be implanted into different pores, it is easy to form interfaces of the implanted electronic materials.