发明申请
- 专利标题: Semiconductor Constructions
- 专利标题(中): 半导体建筑
-
申请号: US12052124申请日: 2008-03-20
-
公开(公告)号: US20080166572A1公开(公告)日: 2008-07-10
- 发明人: Cancheepuram V. Srividya , F. Daniel Gealy , Thomas M. Graettinger
- 申请人: Cancheepuram V. Srividya , F. Daniel Gealy , Thomas M. Graettinger
- 主分类号: B32B9/04
- IPC分类号: B32B9/04
摘要:
The invention includes a method of depositing a noble metal. A substrate is provided. The substrate has a first region and a second region. The first and second regions are exposed to a mixture comprising a precursor of a noble metal and an oxidant. During the exposure, a layer containing the noble metal is selectively deposited onto the first region relative to the second region. In particular applications, the first region can comprise borophosphosilicate glass, and the second region can comprise either aluminum oxide or doped non-oxidized silicon. The invention also includes capacitor constructions and methods of forming capacitor constructions.
公开/授权文献
- US07687844B2 Semiconductor constructions 公开/授权日:2010-03-30
信息查询