发明申请
- 专利标题： High Pressure Hydrogen Annealing for Mosfet
- 专利标题（中）： 高压氢退火用于Mosfet
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申请号： US11885834申请日： 2006-03-08
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公开(公告)号： US20080166890A1公开(公告)日： 2008-07-10
- 发明人: Hyun-Sang Hwang
- 申请人： Hyun-Sang Hwang
- 优先权： KR10-2005-0019192 20050308
- 国际申请： PCT/KR2006/000817 WO 20060308
- 主分类号： H01L21/02
- IPC分类号： H01L21/02
摘要：
The present invention relates to a high pressure hydrogen annealing method for MOSFET semiconductor device, and more particularly, to effectively remove a supersaturated hydrogen on a high-k insulating layer treated by a high pressure hydrogen annealing so that the reliability of a device is improved. In other words, in order to decrease an interfacial charge, it is required to perform a high density and a high pressure hydrogen annealing. In this case, a hydrogen is included at an interface and a bulk of a high-k insulating layer, resulting in improving the initial operational characteristics of a device by passivating interfacial charge existing at an interface, but deteriorating the reliability of a device due to the hydrogen remaining in the insulating bulk. Therefore, in the present invention, a high pressure hydrogen annealing is performed and the subsequent annealing is performed under an inert gas atmosphere for a long time to effectively remove hydrogen molecules remaining at the bulk.