发明申请
- 专利标题: STRUCTURE FOR REDUNDANCY PROGRAMMING OF A MEMORY DEVICE
- 专利标题(中): 用于存储器件冗余编程的结构
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申请号: US12046508申请日: 2008-03-12
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公开(公告)号: US20080170448A1公开(公告)日: 2008-07-17
- 发明人: John Edward Barth , Kevin William Gorman
- 申请人: John Edward Barth , Kevin William Gorman
- 主分类号: G11C29/00
- IPC分类号: G11C29/00
摘要:
A design structure for implementing redundancy programming in a memory macro of an integrated circuit chip. It is assumed that all fails are row fails until determined to be bitline fails, circuit means for implementing a method wherein it is assumed that all fails are row fails until determined to be bitline fails and test patterns are passed back to the failure detecting circuit when a wordline destination of the test patterns has previously been determined to be failing, and the test patterns and resultant patterns are passed between the memory macro and a test engine via logic paths connecting the memory macro to other circuits in said integrated circuit chip.
公开/授权文献
- US07954028B2 Structure for redundancy programming of a memory device 公开/授权日:2011-05-31
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