发明申请
US20080171425A1 METHODS OF FORMING AN EPITAXIAL LAYER ON A GROUP IV SEMICONDUCTOR SUBSTRATE
审中-公开
在IV族半导体基板上形成外延层的方法
- 专利标题： METHODS OF FORMING AN EPITAXIAL LAYER ON A GROUP IV SEMICONDUCTOR SUBSTRATE
- 专利标题（中）： 在IV族半导体基板上形成外延层的方法
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申请号： US11954784申请日： 2007-12-12
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公开(公告)号： US20080171425A1公开(公告)日： 2008-07-17
- 发明人: Dmitry Poplavskyy , Maxim Kelman , Francesco Lemmi , Andreas Meisel
- 申请人： Dmitry Poplavskyy , Maxim Kelman , Francesco Lemmi , Andreas Meisel
- 主分类号： H01L21/36
- IPC分类号： H01L21/36
摘要：
A method of forming an epitaxial layer in a chamber is disclosed. The method includes positioning a Group IV semiconductor substrate in the chamber; and depositing a nanoparticle ink, the nanoparticle ink including a set of Group IV nanoparticles and a solvent, wherein a porous compact is formed. The method also includes heating the porous compact to a temperature of between about 100° C. and about 1100° C., and for a time period of between about 5 minutes to about 60 minutes with a heating apparatus, wherein the epitaxial layer is formed.
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