发明申请
US20080176392A1 Method of fabricating grayscale mask using smart cut® wafer bonding process
有权
使用智能切割（R）晶片接合工艺制造灰度掩模的方法
- 专利标题： Method of fabricating grayscale mask using smart cut® wafer bonding process
- 专利标题（中）： 使用智能切割（R）晶片接合工艺制造灰度掩模的方法
-
申请号： US11657258申请日： 2007-01-24
-
公开(公告)号： US20080176392A1公开(公告)日： 2008-07-24
- 发明人: Wei Gao , Bruce D. Ulrich , Yoshi One , Steven R. Droes
- 申请人： Wei Gao , Bruce D. Ulrich , Yoshi One , Steven R. Droes
- 专利权人： Sharp Laboratories of America, Inc.
- 当前专利权人： Sharp Laboratories of America, Inc.
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
A method of fabricating a grayscale mask includes preparing a silicon wafer; depositing a layer of Si3N4 directly on the silicon wafer; implanting H+ ions into the silicon wafer to form a defect layer; depositing a first layer of SiOxNy directly on the Si3N4 layer; depositing a layer of SRO directly on the first layer of SiOxNy; patterning and etching the SRO layer to form a microlens array in the SRO layer; depositing a second layer of SiOxNy on the SRO microlens array; CMP to planarize the second layer of SiOxNy; bonding and cleaving the planarized SiOxNy to a quartz plate to form a graymask reticle; etching to remove silicon from the bonded structure; etching to remove SiOxNy and Si3N4 from the bonded structure; and cleaning and drying the graymask reticle.
公开/授权文献
信息查询
IPC分类:
