Invention Application
- Patent Title: Methods to completely eliminate or significantly reduce defects in copper metallization in IC manufacturing
- Patent Title (中): 完全消除或显着减少IC制造中铜金属化缺陷的方法
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Application No.: US11827468Application Date: 2007-07-12
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Publication No.: US20080176397A1Publication Date: 2008-07-24
- Inventor: Chun-Hung Lin , Huang-Yi Huang , Yuh-Da Fan
- Applicant: Chun-Hung Lin , Huang-Yi Huang , Yuh-Da Fan
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Main IPC: H01L21/768
- IPC: H01L21/768

Abstract:
A method for the improved electroplating of copper onto a copper seed layer provides treating the surface of a copper seed layer with nitrogen or another anaerobic gas. In another aspect, a burnishing treatment is used to enhance the platability of the copper seed layer. According to another aspect, the seed layer is annealed either at an elevated temperature or for an extended time at room temperature. According to another aspect, the seed layer surface is exposed to a chemical solution that includes a surfactant, chemicals that dissolve contaminants, or both. In another aspect, the deposition of the copper seed layer may be tailored to produce a surface morphology more suited to electroplating. Following the treatment of the seed layer, the copper layer that is electroplated onto the seed layer exhibits improved quality.
Information query
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