发明申请
- 专利标题： ETCHING METHOD AND ETCHING EQUIPMENT
- 专利标题（中）： 蚀刻方法和蚀刻设备
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申请号： US12054095申请日： 2008-03-24
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公开(公告)号： US20080176409A1公开(公告)日： 2008-07-24
- 发明人: Kazuo TAKATA , Yutaka Kudou , Satoshi Tani
- 申请人： Kazuo TAKATA , Yutaka Kudou , Satoshi Tani
- 优先权： JP2005-295462 20051007
- 主分类号： H01L21/3065
- IPC分类号： H01L21/3065
摘要：
The invention provides an etching method for realizing trench etching without causing any damages to the side walls of the trench while maintaining a high-etching rate. The plasma etching method relates to forming a groove or a hole by forming a silicon trench to a silicon substrate or a silicon substrate having a silicon oxide dielectric layer via a mixed gas plasma containing a mixed gas of SF6 and O2 or a mixed gas of SF6, O2 and SiF4 and having added thereto a gas containing hydrogen within the range of 5 to 16% (percent concentration) of the total gas flow rate of the mixed gas.
公开/授权文献
- US08288287B2 Etching method and etching equipment 公开/授权日：2012-10-16
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