发明申请
US20080178913A1 PROCESS FOR WAFER BACKSIDE POLYMER REMOVAL WITH A RING OF PLASMA UNDER THE WAFER
审中-公开
用WAFER的等离子体环拆除背面聚合物的方法
- 专利标题: PROCESS FOR WAFER BACKSIDE POLYMER REMOVAL WITH A RING OF PLASMA UNDER THE WAFER
- 专利标题(中): 用WAFER的等离子体环拆除背面聚合物的方法
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申请号: US11685902申请日: 2007-03-14
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公开(公告)号: US20080178913A1公开(公告)日: 2008-07-31
- 发明人: KENNETH S. COLLINS , Hiroji Hanawa , Andrew Nguyen , Ajit Balakrishna , David Palagashvili , James P. Cruse , Jennifer Y. Sun , Valentin N. Todorow , Shahid Rauf , Kartik Ramaswamy , Gerhard M. Schneider , Imad Yousif , Martin Jeffrey Salinas
- 申请人: KENNETH S. COLLINS , Hiroji Hanawa , Andrew Nguyen , Ajit Balakrishna , David Palagashvili , James P. Cruse , Jennifer Y. Sun , Valentin N. Todorow , Shahid Rauf , Kartik Ramaswamy , Gerhard M. Schneider , Imad Yousif , Martin Jeffrey Salinas
- 主分类号: B08B7/00
- IPC分类号: B08B7/00
摘要:
A process is provided for removing polymer from a backside of a workpiece. The process includes supporting the workpiece on the backside in a vacuum chamber while leaving at least a peripheral annular portion of the backside exposed. The process further includes confining gas flow at the edge of the workpiece within a gap at the edge of the workpiece on the order of about 1% of the diameter of the chamber, the gap defining a boundary between an upper process zone containing the wafer front side and a lower process zone containing the wafer backside. The process also includes providing a polymer etch precursor gas underneath the backside edge of the workpiece and applying RF power to a region underlying the backside edge of the workpiece to generate a first plasma of polymer etch species concentrated in an annular ring concentric with and underneath the backside edge of the workpiece.