发明申请
- 专利标题: Via hole forming method
- 专利标题(中): 通孔形成方法
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申请号: US12007267申请日: 2008-01-08
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公开(公告)号: US20080179302A1公开(公告)日: 2008-07-31
- 发明人: Hiroshi Morikazu
- 申请人: Hiroshi Morikazu
- 专利权人: Disco Corporation
- 当前专利权人: Disco Corporation
- 优先权: JP2007-017146 20070126
- 主分类号: B23K26/38
- IPC分类号: B23K26/38
摘要:
A method of forming a via hole reaching a bonding pad in a wafer having a plurality of devices on the front surface of a substrate and bonding pads formed on each of the devices by applying a pulse laser beam from the rear surface side of the substrate, wherein when a pulse laser beam having a spot diameter which satisfies D/2≦d≦D−2 μm (wherein a diameter of the via hole to be formed is represented as D and a spot diameter of the pulse laser beam is represented as d) is applied in such a manner that the periphery of the spot moves along the inner circumference of the via hole to be formed, the pulse laser beam is applied at an angle of 120 to 180° from the previous application position.
公开/授权文献
- US07935910B2 Method of laser drilling vias 公开/授权日:2011-05-03