NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE

Invention Application

US20080179606A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 有权

Title translation: 氮化物半导体发光器件

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Patent Title: NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE
Patent Title (中): 氮化物半导体发光器件
Application No.: US11971467

Application Date: 2008-01-09
Publication No.: US20080179606A1

Publication Date: 2008-07-31
Inventor: Manabu USUDA , Tetsuzo Ueda , Kenji Orita
Applicant: Manabu USUDA , Tetsuzo Ueda , Kenji Orita
Priority: JP2007-015303 20070125
Main IPC: H01L33/00
IPC: H01L33/00

Abstract:

A nitride semiconductor light emitting device includes a substrate formed of silicon, an insulating film formed on the substrate and a single crystal thin film formed on the insulating film. On the single crystal film, a semiconductor laminated body including a light emitting layer of nitride semiconductor is formed.

Abstract(Chinese):

氮化物半导体发光器件包括由硅形成的衬底，形成在衬底上的绝缘膜和形成在绝缘膜上的单晶薄膜。在单晶膜上形成包括氮化物半导体发光层的半导体层叠体。

Public/Granted literature

US07518153B2 Nitride semiconductor light emitting device Public/Granted day:2009-04-14

Information query

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L33/00	至少有一个电位跃变势垒或表面势垒的专门适用于光发射的半导体器件；专门适用于制造或处理这些半导体器件或其部件的方法或设备；这些半导体器件的零部件（H01L51/00优先；由在一个公共衬底中或其上形成有多个半导体组件并包括具有至少一个电位跃变势垒或表面势垒，专门适用于光发射的器件入H01L27/15；半导体激光器入H01S5/00）