发明申请
US20080179636A1 N-FETS WITH TENSILELY STRAINED SEMICONDUCTOR CHANNELS, AND METHOD FOR FABRICATING SAME USING BURIED PSEUDOMORPHIC LAYERS
审中-公开
具有拉伸半导体通道的N-FET以及使用BURIED PSEUDOMORPHIC层的相同方法
- 专利标题： N-FETS WITH TENSILELY STRAINED SEMICONDUCTOR CHANNELS, AND METHOD FOR FABRICATING SAME USING BURIED PSEUDOMORPHIC LAYERS
- 专利标题（中）： 具有拉伸半导体通道的N-FET以及使用BURIED PSEUDOMORPHIC层的相同方法
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申请号： US11307224申请日： 2007-01-27
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公开(公告)号： US20080179636A1公开(公告)日： 2008-07-31
- 发明人: Dureseti Chidambarrao , Effendi Leobandung , Anda C. Mocuta , Dan M. Mocuta , David M. Onsongo , Carl J. Radens
- 申请人： Dureseti Chidambarrao , Effendi Leobandung , Anda C. Mocuta , Dan M. Mocuta , David M. Onsongo , Carl J. Radens
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L29/04
- IPC分类号： H01L29/04 ; H01L21/335 ; H01L21/8238
摘要：
The present invention relates to high performance n-channel field effect transistors (n-FETs) that each contains a strained semiconductor channel, and methods for forming such n-FETs by using buried pseudomorphic layers that contain pseudomorphically generated compressive strain.