发明申请
US20080179644A1 CMOS image sensor with drive transistor having asymmetry junction region
审中-公开
具有驱动晶体管的CMOS图像传感器具有不对称结区域
- 专利标题： CMOS image sensor with drive transistor having asymmetry junction region
- 专利标题（中）： 具有驱动晶体管的CMOS图像传感器具有不对称结区域
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申请号： US12012049申请日： 2008-01-31
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公开(公告)号： US20080179644A1公开(公告)日： 2008-07-31
- 发明人: Hyuck-In Kwon , Jung-Chak Ahn , Yi-Tae Kim , Keun-Chan Yuk
- 申请人： Hyuck-In Kwon , Jung-Chak Ahn , Yi-Tae Kim , Keun-Chan Yuk
- 优先权： KR2007-10062 20070131
- 主分类号： H01L27/146
- IPC分类号： H01L27/146
摘要：
An image sensor includes a photosensitive device and a drive transistor for generating an electrical signal from charge accumulated in the photosensitive device. The drive transistor includes a source region of a first conductivity type and an asymmetry junction region abutting a portion of the source region and being of a second conductivity type that is opposite of the first conductivity type. The drive transistor is biased such that the asymmetry junction region reduces an effective channel length of the drive transistor.
公开/授权文献
- US2712606A Blocking tube oscillator 公开/授权日：1955-07-05
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