发明申请
US20080180028A1 PLASMA PROCESS UNIFORMITY ACROSS A WAFER BY CONTROLLING RF PHASE BETWEEN OPPOSING ELECTRODES
失效
通过控制电极之间的RF相位，通过控制等离子体等离子体处理的均匀性
- 专利标题： PLASMA PROCESS UNIFORMITY ACROSS A WAFER BY CONTROLLING RF PHASE BETWEEN OPPOSING ELECTRODES
- 专利标题（中）： 通过控制电极之间的RF相位，通过控制等离子体等离子体处理的均匀性
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申请号： US11733770申请日： 2007-04-11
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公开(公告)号： US20080180028A1公开(公告)日： 2008-07-31
- 发明人: Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
- 申请人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
- 主分类号： H01J7/00
- IPC分类号： H01J7/00
摘要：
A method is provided for processing a workpiece in a plasma reactor chamber. The method includes coupling, to a plasma in the chamber, power of an RF frequency via a ceiling electrode and coupling, to the plasma, power of at least approximately the same RF frequency via a workpiece support electrode. The method also includes providing an edge ground return path. The method further includes adjusting the proportion between (a) current flow between said electrodes and (b) current flow to the edge ground return path from said electrodes, to control plasma ion density distribution uniformity over the workpiece.