发明申请
- 专利标题： Techniques for Patterning Features in Semiconductor Devices
- 专利标题（中）： 半导体器件中图形特征的技术
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申请号： US12062186申请日： 2008-04-03
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公开(公告)号： US20080187731A1公开(公告)日： 2008-08-07
- 发明人: Scott D. Allen , Katherina E. Babich , Steven J. Holmes , Arpan P. Mahorowala , Dirk Pfeiffer , Richard Stephan Wise
- 申请人： Scott D. Allen , Katherina E. Babich , Steven J. Holmes , Arpan P. Mahorowala , Dirk Pfeiffer , Richard Stephan Wise
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 主分类号： B32B17/00
- IPC分类号： B32B17/00 ; B41M1/06
摘要：
Techniques for semiconductor processing are provided. In one aspect, a method for patterning one or more features in a semiconductor device comprises the following step. At least one critical dimension of the one or more features is reduced during etching of the antireflective material. A lithographic structure is also provided.
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