发明申请
- 专利标题: SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- 专利标题(中): 半导体器件及其制造方法
-
申请号: US12059652申请日: 2008-03-31
-
公开(公告)号: US20080188050A1公开(公告)日: 2008-08-07
- 发明人: Keiichi SEKIGUCHI , Junichi KOEZUKA , Yasuyuki ARAI , Shunpei YAMAZAKI
- 申请人: Keiichi SEKIGUCHI , Junichi KOEZUKA , Yasuyuki ARAI , Shunpei YAMAZAKI
- 申请人地址: JP Atsugi-shi
- 专利权人: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人地址: JP Atsugi-shi
- 优先权: JP2003-277966 20030723; JP2003-277997 20030723
- 主分类号: H01L21/336
- IPC分类号: H01L21/336
摘要:
The present invention provides a method for manufacturing a semiconductor device, by which a transistor including an active layer, a gate insulating film in contact with the active layer, and a gate electrode overlapping the active layer with the gate insulating film therebetween is provided; an impurity is added to a part of a first region overlapped with the gate electrode with the gate insulating film therebetween in the active layer and a second region but the first region in the active layer by adding the impurity to the active layer from one oblique direction; and the second region is situated in the one direction relative to the first region.
公开/授权文献
- US08236633B2 Semiconductor device and method for manufacturing the same 公开/授权日:2012-08-07