发明申请
- 专利标题: Microlithographic Projection Exposure Apparatus
- 专利标题(中): 微光刻投影曝光装置
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申请号: US11814928申请日: 2005-02-12
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公开(公告)号: US20080192224A1公开(公告)日: 2008-08-14
- 发明人: Toralf Gruner , Alexander Epple , Markus Degünther
- 申请人: Toralf Gruner , Alexander Epple , Markus Degünther
- 申请人地址: DE Oberkochen
- 专利权人: CARL ZEISS SMT AG
- 当前专利权人: CARL ZEISS SMT AG
- 当前专利权人地址: DE Oberkochen
- 国际申请: PCT/EP2005/001435 WO 20050212
- 主分类号: G03B27/72
- IPC分类号: G03B27/72 ; G03B27/54
摘要:
A projection exposure apparatus has a projection lens (10) with an object plane (34), an image plane, an optical axis (28) and a non-telecentric entrance pupil (32). The apparatus further comprises an illumination system (12) having an intermediate field plane (80) and a field stop (36; 36). The field stop is positioned in or in close proximity to the intermediate field plane (80) and defines an illuminated field (14) in the object plane (34) that does not contain the optical axis (28) of the projection lens (24). The illumination system (12) is configured such that, in the object plane (34), a mean of the angles formed between all principal rays (42) emanating from the intermediate field plane (80) on the one hand and the optical axis (28) of the projection lens (24) on the other hand differs from 0°.
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