发明申请
US20080193715A1 Process For Producing a Quartz Glass Component For Use In Semiconductor Manufacture And Component Produced By This Process
审中-公开
用于生产用于半导体制造的石英玻璃组分的方法和由该方法制备的组分
- 专利标题: Process For Producing a Quartz Glass Component For Use In Semiconductor Manufacture And Component Produced By This Process
- 专利标题(中): 用于生产用于半导体制造的石英玻璃组分的方法和由该方法制备的组分
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申请号: US11883617申请日: 2006-01-18
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公开(公告)号: US20080193715A1公开(公告)日: 2008-08-14
- 发明人: Juergen Weber , Ulrich kirst
- 申请人: Juergen Weber , Ulrich kirst
- 申请人地址: DE HANAU
- 专利权人: HERAEUS QUARZGLAS GMGH & CO. KG
- 当前专利权人: HERAEUS QUARZGLAS GMGH & CO. KG
- 当前专利权人地址: DE HANAU
- 优先权: DE10-2005-005-196.0 20050203
- 国际申请: PCT/EP06/00381 WO 20060118
- 主分类号: B32B3/00
- IPC分类号: B32B3/00 ; B44C1/22
摘要:
Quartz glass components for use in semiconductor manufacture are produced by mechanically machining the surface of a quartz glass blank so as to produce an initial average surface roughness Ra,0. The thus machined component surface is then cleaned in an etching solution. The invention relates to the optimisation of particle formation on such components, during the first intended use already. It is proposed to produce an initial average surface roughness Ra,0 of at least 0.2 μm by mechanical machining, and to adjust etching intensity and duration so that an actual etching depth of at least 10 μm is achieved. A quartz glass component produced by this process for use in semiconductor manufacture is characterised in that it comprises, before its first intended use, a surface produced by mechanical machining and etching having an etched structure with an average surface roughness Ra,1 ranging from 0.6 μm to 8 μm, and in that a weight loss of less than 0.4 μg/(mm2×min) which is substantially constant in time is achieved when etching the component with a 10% solution of hydrofluoric acid.
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