发明申请
- 专利标题： METHOD FOR FORMING METAL SILICIDE LAYER
- 专利标题（中）： 形成金属硅酸盐层的方法
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申请号： US11673145申请日： 2007-02-09
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公开(公告)号： US20080194100A1公开(公告)日： 2008-08-14
- 发明人: Tzung-Yu Hung , Chun-Chieh Chang , Chao-Ching Hsieh , Yu-Lan Chang , Yi-Wei Chen
- 申请人： Tzung-Yu Hung , Chun-Chieh Chang , Chao-Ching Hsieh , Yu-Lan Chang , Yi-Wei Chen
- 申请人地址： TW Hsinchu
- 专利权人： United Microelectronics Corp.
- 当前专利权人： United Microelectronics Corp.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
The invention provides a method for forming a metal silicide layer. The method comprises steps of providing a substrate and forming a nickel-noble metal layer over the substrate. A grain boundary sealing layer is formed on the nickel-noble metal layer and then an oxygen diffusion barrier layer is formed on the grain boundary sealing layer. Thereafter, a rapid thermal process is performed to transform a portion of the nickel-noble metal layer into a metal silicide layer. Finally, the oxygen diffusion barrier layer, the grain boundary sealing layer and the rest portion of the nickel-noble metal layer are removed.
公开/授权文献
- US07553762B2 Method for forming metal silicide layer 公开/授权日：2009-06-30
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