Invention Application
US20080195893A1 A REPAIRABLE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF REPAIRING THE SAME
审中-公开
一种可修复的半导体存储器件及其修复方法
- Patent Title: A REPAIRABLE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF REPAIRING THE SAME
- Patent Title (中): 一种可修复的半导体存储器件及其修复方法
-
Application No.: US11845194Application Date: 2007-08-27
-
Publication No.: US20080195893A1Publication Date: 2008-08-14
- Inventor: Byeong Hoon LEE , Ki Hong KIM , Seung Won LEE , Sun Kwon KIM
- Applicant: Byeong Hoon LEE , Ki Hong KIM , Seung Won LEE , Sun Kwon KIM
- Applicant Address: KR Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Gyeonggi-do
- Priority: KR10-2007-0013238 20070208
- Main IPC: G06F11/00
- IPC: G06F11/00

Abstract:
A repairable semiconductor memory device including a memory cell array having a first block to store first system data and a second block to store second system data identical to the first system data. A controller transmits the first system data to a memory unit in response to a reset signal output from a host and the second system data to the memory unit based on a fail detection signal generated by an ECC detection block. The ECC detection block determines whether the first system data is defective. When a defect is generated in the first system data during resetting of the semiconductor memory device, the first system data is repaired by supplying the second system data.
Information query