发明申请
- 专利标题: HIGH VOLTAGE DEVICE WITH LOW ON-RESISTANCE
- 专利标题(中): 具有低导通电阻的高压装置
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申请号: US11676624申请日: 2007-02-20
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公开(公告)号: US20080197410A1公开(公告)日: 2008-08-21
- 发明人: Puo-Yu Chiang , Tsung-Yi Huang , Fu-Hsin Chen , Ting-Pang Li , Chung-Yeh Wu
- 申请人: Puo-Yu Chiang , Tsung-Yi Huang , Fu-Hsin Chen , Ting-Pang Li , Chung-Yeh Wu
- 申请人地址: TW Hsin-Chu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址: TW Hsin-Chu
- 主分类号: H01L29/78
- IPC分类号: H01L29/78
摘要:
A high-voltage transistor device has a first well region with a first conductivity type in a semiconductor substrate, and a second well region with a second conductivity type in the semiconductor substrate substantially adjacent to the first well region. A field ring with the second conductivity type is formed on a portion of the first well region, and the top surface of the field ring has at least one curved recess. A field dielectric region is formed on the field ring and extends to a portion of the first well region. A gate structure is formed over a portion of the field dielectric region and extends to a portion of the second well region.
公开/授权文献
- US07508032B2 High voltage device with low on-resistance 公开/授权日:2009-03-24