发明申请
- 专利标题： Semiconductor device and method for manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US11896164申请日： 2007-08-30
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公开(公告)号： US20080197421A1公开(公告)日： 2008-08-21
- 发明人: Riichiro Mitsuhashi , Raghunath Singanamalla
- 申请人： Riichiro Mitsuhashi , Raghunath Singanamalla
- 优先权： JP2007-036440 20070216
- 主分类号： H01L29/94
- IPC分类号： H01L29/94 ; H01L21/336
摘要：
A semiconductor device includes a p-type active region and an n-type active region which are formed in a semiconductor substrate and a p-type MISFET including a gate insulating film formed on the p-type active region and a first gate electrode including a first electrode formation film of which upper part has a concentration of La higher than the other part thereof. The semiconductor device further includes an n-type MISFET including a gate insulating film formed on the n-type active region and a second gate electrode including a second electrode formation film of which upper part has a concentration of Al higher than the other part thereof.
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