发明申请
- 专利标题: Laser gas injection system
- 专利标题(中): 激光喷射系统
-
申请号: US11796065申请日: 2007-04-25
-
公开(公告)号: US20080205472A1公开(公告)日: 2008-08-28
- 发明人: Wayne J. Dunstan , Kevin M. O'Brien , Robert N. Jacques , Herve A. Besaucele , Daniel J. Riggs , Aravind Ratnam
- 申请人: Wayne J. Dunstan , Kevin M. O'Brien , Robert N. Jacques , Herve A. Besaucele , Daniel J. Riggs , Aravind Ratnam
- 申请人地址: US CA San Diego
- 专利权人: Cymer, Inc.
- 当前专利权人: Cymer, Inc.
- 当前专利权人地址: US CA San Diego
- 主分类号: H01S3/22
- IPC分类号: H01S3/22
摘要:
A method and apparatus are disclosed which may comprise predicting the gas lifetime for a gas discharge laser light source for a photolithography process, the light source comprising a halogen containing lasing gas may comprise: utilizing at least one of a plurality of laser operating input and/or output parameters; utilizing a set of at least one parameter of utilization in the photolithography process to determine a gas use model in relation to the respective input or output parameter; predicting the end of gas life based upon the model and a measurement of the respective input or output parameter. The parameter may comprise a pulse utilization pattern. The method and apparatus may comprise performing gas management for a gas discharge laser light source for a photolithography process, the light source comprising a halogen containing lasing gas comprising: utilizing periodic and frequent partial gas refills comprising an inject comprising a mixture of halogen gas and bulk gas in generally the same ration as the premix ratio provided to the laser in a full gas refill, and in an amount less than two percent of the total gas pressure prior to the injection.
公开/授权文献
- US07835414B2 Laser gas injection system 公开/授权日:2010-11-16
信息查询