发明申请
US20080206735A1 HIGH SURFACE CULTIVATION SYSTEM WITH SURFACE INCREASING SUBSTRATE
审中-公开
表面增强基体的高表面培养体系
- 专利标题: HIGH SURFACE CULTIVATION SYSTEM WITH SURFACE INCREASING SUBSTRATE
- 专利标题(中): 表面增强基体的高表面培养体系
-
申请号: US12039709申请日: 2008-02-28
-
公开(公告)号: US20080206735A1公开(公告)日: 2008-08-28
- 发明人: Soheil Asgari
- 申请人: Soheil Asgari
- 申请人地址: DE Wiesbaden
- 专利权人: CINVENTION AG
- 当前专利权人: CINVENTION AG
- 当前专利权人地址: DE Wiesbaden
- 主分类号: C12N5/02
- IPC分类号: C12N5/02 ; C12M3/00 ; C12M1/24
摘要:
An exemplary embodiment of a culture vessel suitable is provided for a cultivation of cells and/or tissues. The exemplary vessel comprising at least one reversibly closable aperture in the vessel wall, and at least one surface-increasing substrate within the vessel, with the substrate being made of a single mold. According to another exemplary embodiment, a system can be provided comprising at least two vessels being interconnected via at least one aperture in their vessel wall, and a cultivation process using such a vessel or system, in which at least one type of cells, tissue, tissue-like cell cultures, organs, organ-like cell cultures, or multicellular organisms may be cultivated in the presence of at least one fluid or solid medium, e.g., provided for growing and/or cultivating the culture.
信息查询