发明申请
US20080206735A1 HIGH SURFACE CULTIVATION SYSTEM WITH SURFACE INCREASING SUBSTRATE 审中-公开
表面增强基体的高表面培养体系

  • 专利标题: HIGH SURFACE CULTIVATION SYSTEM WITH SURFACE INCREASING SUBSTRATE
  • 专利标题(中): 表面增强基体的高表面培养体系
  • 申请号: US12039709
    申请日: 2008-02-28
  • 公开(公告)号: US20080206735A1
    公开(公告)日: 2008-08-28
  • 发明人: Soheil Asgari
  • 申请人: Soheil Asgari
  • 申请人地址: DE Wiesbaden
  • 专利权人: CINVENTION AG
  • 当前专利权人: CINVENTION AG
  • 当前专利权人地址: DE Wiesbaden
  • 主分类号: C12N5/02
  • IPC分类号: C12N5/02 C12M3/00 C12M1/24
HIGH SURFACE CULTIVATION SYSTEM WITH SURFACE INCREASING SUBSTRATE
摘要:
An exemplary embodiment of a culture vessel suitable is provided for a cultivation of cells and/or tissues. The exemplary vessel comprising at least one reversibly closable aperture in the vessel wall, and at least one surface-increasing substrate within the vessel, with the substrate being made of a single mold. According to another exemplary embodiment, a system can be provided comprising at least two vessels being interconnected via at least one aperture in their vessel wall, and a cultivation process using such a vessel or system, in which at least one type of cells, tissue, tissue-like cell cultures, organs, organ-like cell cultures, or multicellular organisms may be cultivated in the presence of at least one fluid or solid medium, e.g., provided for growing and/or cultivating the culture.
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