发明申请
- 专利标题： Memory and method of fabricating the same
- 专利标题（中）： 记忆及其制作方法
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申请号： US12149137申请日： 2008-04-28
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公开(公告)号： US20080206946A1公开(公告)日： 2008-08-28
- 发明人: Kouichi Yamada
- 申请人： Kouichi Yamada
- 申请人地址： JP Osaka
- 专利权人： SANYO ELECTRIC CO., LTD.
- 当前专利权人： SANYO ELECTRIC CO., LTD.
- 当前专利权人地址： JP Osaka
- 优先权： JPJP2004-75768 20040317; JPJP2004-170749 20040609
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A memory capable of reducing the memory cell size is provided. This memory includes a first conductive type first impurity region formed on a memory cell array region of the main surface of a semiconductor substrate for functioning as a first electrode of a diode included in a memory cell and a plurality of second conductive type second impurity regions, formed on the surface of the first impurity region at a prescribed interval, each functioning as a second electrode of the diode.
公开/授权文献
- US07704825B2 Method of fabricating memory including diode 公开/授权日：2010-04-27
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