发明申请
US20080206965A1 STRAINED SILICON MADE BY PRECIPITATING CARBON FROM Si(1-x-y)GexCy ALLOY
审中-公开
通过从Si（1-x-y）GexCy合金中制备碳制成的应变硅
- 专利标题： STRAINED SILICON MADE BY PRECIPITATING CARBON FROM Si(1-x-y)GexCy ALLOY
- 专利标题（中）： 通过从Si（1-x-y）GexCy合金中制备碳制成的应变硅
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申请号： US11679308申请日： 2007-02-27
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公开(公告)号： US20080206965A1公开(公告)日： 2008-08-28
- 发明人: Oleg Gluschenkov , Yaocheng Liu , Alexander Reznicek , Devendra Sadana
- 申请人： Oleg Gluschenkov , Yaocheng Liu , Alexander Reznicek , Devendra Sadana
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
Disclosed herein is a method of preparing strained silicon comprising annealing a carbon-doped silicon-germanium (SiGe:C) alloy containing region disposed adjacent to a silicon region, wherein the lattice constant of the SiGe:C alloy after annealing is greater than that of the SiGe:C alloy prior to annealing. The method can be used to prepare articles including metal oxide semiconductor field effect transistor (MOSFET) devices.
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