发明申请
US20080209381A1 SHALLOW TRENCH ISOLATION DUMMY PATTERN AND LAYOUT METHOD USING THE SAME
有权
使用相同的浅层分离分离模式和布局方法
- 专利标题： SHALLOW TRENCH ISOLATION DUMMY PATTERN AND LAYOUT METHOD USING THE SAME
- 专利标题（中）： 使用相同的浅层分离分离模式和布局方法
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申请号： US12116284申请日： 2008-05-07
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公开(公告)号： US20080209381A1公开(公告)日： 2008-08-28
- 发明人: Kelvin Yih-Yuh Doong , Chin-Chiu Hsia
- 申请人： Kelvin Yih-Yuh Doong , Chin-Chiu Hsia
- 申请人地址： TW Hsin-Chu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址： TW Hsin-Chu
- 优先权： TW92132806 20031121
- 主分类号： G06F17/50
- IPC分类号： G06F17/50
摘要：
A dummy cell pattern for shallow trench isolation (STI). Active and shallow trench isolation areas are bounded by a circumference. An active area pattern completely overlaps the active area and a first polysilicon pattern in the shallow trench isolation area is outside the active area pattern. Layout methods using the same are also disclosed.
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