发明申请
- 专利标题: Sputtering apparatus, method for producing a transparent electroconductive film
- 专利标题(中): 溅射装置,透明导电膜的制造方法
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申请号: US11987598申请日: 2007-12-03
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公开(公告)号: US20080210546A1公开(公告)日: 2008-09-04
- 发明人: Sadayuki Ukishima , Satoru Takasawa , Hideo Takei , Satoru Ishibashi
- 申请人: Sadayuki Ukishima , Satoru Takasawa , Hideo Takei , Satoru Ishibashi
- 申请人地址: JP Chigasaki-shi
- 专利权人: ULVAC INC.
- 当前专利权人: ULVAC INC.
- 当前专利权人地址: JP Chigasaki-shi
- 优先权: JP2005-208242 20050719
- 主分类号: C23C14/34
- IPC分类号: C23C14/34
摘要:
A transparent electroconductive film having a small resistance value and a high transmittance and causing no damage upon an underlying organic EL film is formed. First and second targets are spaced and arranged in parallel, and a shielding plate is provided between the space and a transporting path for an object to be film-formed. Sputtered particles are allowed to reach the object through a release hole formed at the shielding plate. The sputtering particles obliquely irradiated are shielded by the shielding plate so that the transparent electroconductive film having a low resistivity and high transmittance can be formed.
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