Invention Application
- Patent Title: Power Semiconductor Module and Method for Producing the Same
- Patent Title (中): 功率半导体模块及其制造方法
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Application No.: US12052863Application Date: 2008-03-21
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Publication No.: US20080211091A1Publication Date: 2008-09-04
- Inventor: Alfred Kemper , Guido Strotmann
- Applicant: Alfred Kemper , Guido Strotmann
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Priority: DE102005045100.4 20050921
- Main IPC: H01L23/48
- IPC: H01L23/48 ; B23K20/10
Abstract:
A method for producing a power semiconductor module including forming a contact between a contact region and a contact element as an ultrasonic welding contact via a sonotrode. The ultrasonic welding operation also being used for joining the contact regions with the contact ends and consequently for joining the contacts and the foot regions.
Public/Granted literature
- US07986034B2 Power semiconductor module and method for producing the same Public/Granted day:2011-07-26
Information query
IPC分类:
