发明申请
- 专利标题： Alignment mark forming method, alignment method, semiconductor device manufacturing method, and solid-state image capturing apparatus manufacturing method
- 专利标题（中）： 对准标记形成方法，取向方法，半导体器件制造方法和固体摄像装置的制造方法
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申请号： US12009982申请日： 2008-01-23
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公开(公告)号： US20080213936A1公开(公告)日： 2008-09-04
- 发明人: Tetsuya Hatai
- 申请人： Tetsuya Hatai
- 申请人地址： JP Osaka
- 专利权人： Sharp Kabushiki Kaisha
- 当前专利权人： Sharp Kabushiki Kaisha
- 当前专利权人地址： JP Osaka
- 优先权： JP2007-012935 20070123
- 主分类号： H01L31/00
- IPC分类号： H01L31/00 ; H01L21/425
摘要：
An alignment mark forming method according to the present invention includes: an alignment mark forming step of using an impurity implantation region as an alignment target layer and using, as a mask, the same resist film used for forming the impurity implantation region to form an alignment mark that is used when a patterning is performed in at least one of a subsequent impurity implantation step and a subsequent process layer forming step.
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