发明申请
US20080214006A1 METHODS OF USING CORROSION-INHIBITING CLEANING COMPOSITIONS FOR METAL LAYERS AND PATTERNS ON SEMICONDUCTOR SUBSTRATES
审中-公开
在金属层上使用腐蚀抑制性清洁组合物和在半导体衬底上形成图案的方法
- 专利标题: METHODS OF USING CORROSION-INHIBITING CLEANING COMPOSITIONS FOR METAL LAYERS AND PATTERNS ON SEMICONDUCTOR SUBSTRATES
- 专利标题(中): 在金属层上使用腐蚀抑制性清洁组合物和在半导体衬底上形成图案的方法
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申请号: US12122264申请日: 2008-05-16
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公开(公告)号: US20080214006A1公开(公告)日: 2008-09-04
- 发明人: Kwang-Wook Lee , In-Seak Hwang , Yong-Sun Ko , Byoung-Moon Yoon , Kyung-Hyun Kim , Ky-Sub Kim , Sun-Young Song , Hyuk-Jin Lee , Byung-Mook Kim
- 申请人: Kwang-Wook Lee , In-Seak Hwang , Yong-Sun Ko , Byoung-Moon Yoon , Kyung-Hyun Kim , Ky-Sub Kim , Sun-Young Song , Hyuk-Jin Lee , Byung-Mook Kim
- 优先权: KR2004-8798 20040210; KR2004-35210 20040518
- 主分类号: H01L21/461
- IPC分类号: H01L21/461 ; G03C1/00
摘要:
Provided herein are methods for using corrosion-inhibiting cleaning compositions for semiconductor wafer processing that include an aqueous admixture of at least water, a surfactant and a corrosion-inhibiting compound selected from a group consisting of amino phosphonates, polyamines and polycarboxylic acids. The quantity of the corrosion-inhibiting compound in the admixture is preferably in a range from about 0.0001 wt % to about 0.1 wt % and the quantity of the surfactant is preferably in a range from about 0.001 wt % to about 1.0 wt %. The aqueous admixture may also include sulfuric acid and a fluoride, which act as oxide etchants, and a peroxide, which acts as a metal etchant.